Title :
The multi-stable behaviour of SOI-NMOS transistors at low temperatures
Author :
Tack, M. ; Simoen, E. ; Li, X.Q. ; Claeys, C. ; Declerck, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Summary form only given. The operation of NMOS transistors made in laser-recrystallized SOI material has been investigated at both 77 K and 4 K. The back-gate voltage (and its history) turns out to have an important influence on the characteristics. It is found that by applying adequate pulses at the back gates, a variety of stable operating states, which are reflected in a variety of threshold voltages, can be established. This multistable behavior of SOI-NMOS transistors at low temperatures is illustrated for a bistable case at 77 K. By applying different back-gate conditions it is possible to obtain different high-threshold states. Stress measurements confirm the stability of the various states. A very similar behavior is also found for transistors operating at 4 K
Keywords :
field effect integrated circuits; insulated gate field effect transistors; stability; 4 K; 77 K; NMOS transistor operation; SOI-NMOS transistors; Si; back-gate conditions; back-gate voltage; high-threshold states; laser-recrystallized SOI material; low temperatures; multi-stable behaviour; multistable behavior; stable operating states; threshold voltages; Conductivity; Cryogenics; History; Leakage current; Stability; Superconductivity; Tellurium; Temperature distribution; Threshold voltage;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95447
