Title :
A performance comparison of advanced SOI technologies
Author :
Adams, Dennis ; Austin, Mary ; Rai-Choudhury, P. ; Hwang, Jeong
Author_Institution :
Westinghouse Electr. Corp., Baltimore, MD, USA
Abstract :
Summary form only given. Devices have been fabricated using conventional SOS, rapid thermal anneal (RTA) SOS, solid-phase epitaxy and regrowth (SPEAR) SOS, RTA-SPEAR SOS, separation by implantation of oxygen (SIMOX), RTA-SIMOX, and zone-melt recrystallization (ZMR) wafers. The process sequence used was a double-level-metal 1.25-μm CMOS/SOS process. A comprehensive test vehicle featuring 16 K and 64 K SRAMs was used to allow both parametric and functional characterization. For 0.3-μm silicon film thickness on SOS, SPEAR processing resulted in a 30% improvement in carrier mobilities and a 10-20% improvement in device saturation currents over conventional SOS. No significant leakage improvement was observed. RTA processing at 1390°C has shown potential for performance enhancement on SOS. Mobility improvements of 10-20% have been demonstrated, while drain leakage was unchanged. Preliminary SIMOX results have indicated improvements of 50% for electron mobilities, with hole mobilities unchanged over conventional SOS. Drain leakage was two orders of magnitude lower. Characterization results have also been obtained for ZMR, RTA-SPEAR SOS, improved SPEAR-SOS, and improved SIMOX wafers
Keywords :
CMOS integrated circuits; carrier mobility; integrated circuit technology; leakage currents; 1.25 micron; 1390 degC; CMOS/SOS process; RTA-SIMOX; RTA-SPEAR SOS; SRAM test vehicle; Si-Al2O3; advanced SOI technologies; carrier mobilities; conventional SOS; device saturation currents; double-level-metal; drain leakage; electron mobilities; functional characterization; hole mobilities; performance comparison; rapid thermal anneal; solid-phase epitaxy; zone-melt recrystallization; CMOS process; CMOS technology; Electron mobility; Epitaxial growth; Rapid thermal annealing; Rapid thermal processing; Semiconductor films; Silicon; Testing; Vehicles;
Conference_Titel :
SOS/SOI Technology Workshop, 1988. Proceedings., 1988 IEEE
Conference_Location :
St. Simons Island, GA
DOI :
10.1109/SOI.1988.95448
