PPPS-2013: 2nd generation Si and SiC SGTO´s for extreme pulse power and sub-microsecond switching

Summary form only given. Through a series of ARL Cooperative Agreements, Silicon Power¹ has been able to optimize Silicon and SiC Super-GTO´s (SGTO´S) for extreme pulse power, operating in excess of 10kA/cm2, about a 10-fold higher density than the traditional thyristor. Moreover, SGTO active turn-off also provides the opportunity for supporting recovery voltage with tq times of 10μs or less at high dV/dt´s. In this paper we will show both silicon and SiC devices and modules operating at these power densities and some of the modeling that supported 2^nd generation SGTO success.