Title :
Effect of N2 addition on species kinetics in hydrogen and methane based inductively coupled pulsed plasmas
Author :
Jacq, S. ; Cardinaud, C. ; Le Brizoual, L. ; Granier, A.
Author_Institution :
Inst. des Mater. Jean Rouxel (IMN), Univ. de Nantes, Nantes, France
Abstract :
In microelectronics and microtechnology, as the semiconductor feature size decreases and pattern density increases, the industry is facing the challenge of finding new plasma processes to meet the requirement of the next devices generation. Within this scheme pulsed RF plasmas are increasingly being employed for plasma etching or deposition. Besides the interest for potential applications, pulsed plasmas combined to time resolved measurements are known to be powerful tools to study species kinetics.
Keywords :
association; high-frequency discharges; hydrogen; integrated circuits; nitrogen; organic compounds; plasma chemistry; plasma deposition; plasma diagnostics; reaction kinetics; sputter etching; H2; N2; N2 addition; hydrogen; inductively coupled pulsed plasmas; methane; microelectronics; microtechnology; next device generation; pattern density; plasma deposition; plasma etching; plasma processes; scheme pulsed RF plasmas; semiconductor feature size; species kinetics; time resolved measurements; Atomic measurements; Electrostatic measurements; Kinetic theory; Plasma measurements; Plasmas; Radio frequency; Temperature measurement;
Conference_Titel :
Plasma Science (ICOPS), 2013 Abstracts IEEE International Conference on
Conference_Location :
San Francisco, CA
DOI :
10.1109/PLASMA.2013.6635040
