DocumentCode
1597656
Title
Field emission from nanoporous silicon carbide
Author
Kang, M.-G. ; Lezec, H. ; Kallaher, R.L. ; Sharifi, F.
Author_Institution
Maryland NanoCenter, Univ. of Maryland, College Park, MD, USA
fYear
2012
Firstpage
1
Lastpage
4
Abstract
A new type of cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. The emitter is a unique structure, comprised of a monolithic and rigid porous semiconductor nanostructure with homogenously distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources potentially enable breakthroughs in several critical technologies, including microwave electronics and x-ray imaging.
Keywords
cathodes; electron field emission; nanoporous materials; silicon compounds; SiC; X-ray imaging; cold cathode; field emission electron source; microwave electronics; monolithic semiconductor nanostructure; nanoporous silicon carbide; rigid porous semiconductor nanostructure; room temperature process; thermal source; Electric variables measurement; Microwave FET integrated circuits; Microwave imaging; Microwave integrated circuits; Microwave technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6321952
Filename
6321952
Link To Document