Title :
Field emission from nanoporous silicon carbide
Author :
Kang, M.-G. ; Lezec, H. ; Kallaher, R.L. ; Sharifi, F.
Author_Institution :
Maryland NanoCenter, Univ. of Maryland, College Park, MD, USA
Abstract :
A new type of cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. The emitter is a unique structure, comprised of a monolithic and rigid porous semiconductor nanostructure with homogenously distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources potentially enable breakthroughs in several critical technologies, including microwave electronics and x-ray imaging.
Keywords :
cathodes; electron field emission; nanoporous materials; silicon compounds; SiC; X-ray imaging; cold cathode; field emission electron source; microwave electronics; monolithic semiconductor nanostructure; nanoporous silicon carbide; rigid porous semiconductor nanostructure; room temperature process; thermal source; Electric variables measurement; Microwave FET integrated circuits; Microwave imaging; Microwave integrated circuits; Microwave technology;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6321952
