Title :
Carbon nanotube FET process variability and noise model for radiofrequency investigations
Author :
Landauer, Gerhard M. ; González, José L.
Author_Institution :
Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Barcelona, Spain
Abstract :
This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET´s RF-performance and noise behavior.
Keywords :
carbon nanotube field effect transistors; semiconductor device models; semiconductor device noise; CNFET RF-performance; FoM; ITRS requirement; International Technology Roadmap for Semiconductors; RF design; RF simulation; analog silicon-based device; carbon nanotube field-effect transistor; figures of merit; manufacturing process variability; noise behavior; noise model; radiofrequency design; radiofrequency investigation; Capacitance; Electron tubes; Manufacturing; Noise; Radio access networks; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6321963
