Carbon nanotube FET process variability and noise model for radiofrequency investigations

Author

Landauer, Gerhard M. ; González, José L.

Author_Institution

Dept. d´´Eng. Electron., Univ. Politec. de Catalunya, Barcelona, Spain

fYear

2012

Firstpage

1

Lastpage

5

Abstract

This work focuses on process variability and noise in carbon nanotube field-effect transistors (CNFET) to obtain a compact model usable for radiofrequency (RF) design and simulations. CNFET figures of merit (FoM) are determined and compared to International Technology Roadmap for Semiconductors (ITRS) requirements on conventional analog silicon-based devices. The developed model is also used to investigate on the impact of manufacturing process variability on the CNFET´s RF-performance and noise behavior.

Keywords

carbon nanotube field effect transistors; semiconductor device models; semiconductor device noise; CNFET RF-performance; FoM; ITRS requirement; International Technology Roadmap for Semiconductors; RF design; RF simulation; analog silicon-based device; carbon nanotube field-effect transistor; figures of merit; manufacturing process variability; noise behavior; noise model; radiofrequency design; radiofrequency investigation; Capacitance; Electron tubes; Manufacturing; Noise; Radio access networks; Radio frequency; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on

Conference_Location

Birmingham

ISSN

1944-9399

Print_ISBN

978-1-4673-2198-3

Type

conf

DOI

10.1109/NANO.2012.6321963

Filename

6321963