Experimental evidence of scaling effect by using novel crown shape RRAM structure

Experimental evidence of scaling effect by using novel crown shape RRAM structure which can efficiently be controlled by switching area. This structure has a low reset current (<;10 μA) by controlling localized conducting filament (CF) at the nanoscale for low power switching resistive random access memory (RRAM). This novel structure also shows the advantages for forming-less process originated from vertical deposition as well as reducing active area size with a relatively large technology node.