Zinc Oxide nanowire transistor nonvolatile memory with a ferroelectric polymer interlayer

A ferroelectric polymer memory device based on a top-gated Zinc Oxide (ZnO) nanowire (NW) field-effect transistor (FET) have been fabricated using room temperature process, where the nanowire semiconductor channel was coated with a poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] layer. The fabricated test device showed excellent properties, with a 5V wide memory window at V_G<;20V, high On/Off ratio >;10⁵ and low gate leakage current <;10^-12A. Memory effect was verified by the counterclockwise direction of the transfer curve hysteresis of the FET devices, due to the fact that memory window is ascribable to the switchable remnant polarization. This result is an actual demonstration of the memory application which built on nanowire devices.