DocumentCode
1598460
Title
An Analysis of IGBT Connected in Series under Active Voltage Control
Author
Chen, Zhongyuan ; Wen, JiaLiang ; Han, Jian ; Wei, Quanqing ; Wu, Rui ; Jia, Na ; Sha, Deshang
Author_Institution
Beijing Inst. of Technol., Beijing, China
fYear
2012
Firstpage
1188
Lastpage
1191
Abstract
This paper describes an active voltage control for IGBT connected in series. The gate drive circuit not only amplifies the control signal, but also control the IGBT´s dv/dt and over voltage during switching transient. This make the switching performance less dependent on IGBT itself. This paper provides a stability analysis to judge the controller stability. The experiment results show the IGBT voltage banlancing under active voltage control.
Keywords
insulated gate bipolar transistors; stability; voltage control; IGBT voltage balancing; active voltage control; controller stability; gate drive circuit; stability analysis; switching transient; Automatic voltage control; Insulated gate bipolar transistors; Logic gates; Stability analysis; Switches; Active Voltage Control; IGBT; series connection;
fLanguage
English
Publisher
ieee
Conference_Titel
Intelligent System Design and Engineering Application (ISDEA), 2012 Second International Conference on
Conference_Location
Sanya, Hainan
Print_ISBN
978-1-4577-2120-5
Type
conf
DOI
10.1109/ISdea.2012.551
Filename
6173419
Link To Document