Title :
Recent developments in nonlinear device modelling techniques
Author :
Van Niekerk, C. ; Schreurs, Dominique ; Meyer, P.
Author_Institution :
Dept. of Electron. Eng., Stellenbosch Univ.
fDate :
6/21/1905 12:00:00 AM
Abstract :
An overview of recent developments in device modelling work performed at the University of Stellenbosch and the Catholic University of Leuven is presented. Results describing an accurate and robust multi-bias model extraction algorithm are presented. An introduction is also provided to the nonlinear network measurement system (NNMS) and results are presented to illustrate the implications for nonlinear modelling and design
Keywords :
Schottky gate field effect transistors; UHF field effect transistors; high electron mobility transistors; microwave field effect transistors; semiconductor device measurement; semiconductor device models; MESFETs; PHEMTs; device modelling work; multi-bias model extraction algorithm; nonlinear device modelling techniques; nonlinear network measurement system; semiconductor device models; Africa; Circuit simulation; Circuit synthesis; Data mining; FETs; Frequency measurement; Phase measurement; Prototypes; Robustness; Scattering parameters;
Conference_Titel :
Africon, 1999 IEEE
Conference_Location :
Cape Town
Print_ISBN :
0-7803-5546-6
DOI :
10.1109/AFRCON.1999.821928
