Title :
Optimization of SiO2-Si3N4 antireflective coating on P+NN+ photodiode
Author :
Resnik, D. ; Vrtacnik, D. ; Amon, S.
Author_Institution :
Lab. of Microsensor Struct., Ljubljana Univ., Slovenia
fDate :
6/21/1905 12:00:00 AM
Abstract :
Optimization of anti-reflective coating on planar 1.8 mm2 area monocrystalline silicon photodiode was performed. Thermally grown SiO2 and LPCVD Si3N4 of different thicknesses were fabricated on the top of p+nn+ structure. Short circuit current density Jsc, open circuit voltage Voc and spectral response were measured as a function of both layers thickness and the results are discussed. Considerable improvement, particularly of Jsc was achieved with matched thicknesses of the two layers over single layer. It is shown that by tailoring the thickness of individual layers, spectral response can be efficiently varied along the wavelength axes
Keywords :
antireflection coatings; chemical vapour deposition; current density; optical fabrication; optical films; optimisation; photodiodes; silicon compounds; LPCVD; P+NN+ photodiode; SiO2-Si3N4; SiO2-Si3N4 antireflective coating optimisation; layers thickness; matched thicknesses; monocrystalline silicon photodiode; open circuit voltage; p+nn+ structure; short circuit current density; spectral response; thermally grown; wavelength axes; Cleaning; Coatings; Conductivity; Instruments; Neural networks; Oxidation; Photodiodes; Silicon;
Conference_Titel :
Africon, 1999 IEEE
Conference_Location :
Cape Town
Print_ISBN :
0-7803-5546-6
DOI :
10.1109/AFRCON.1999.821940
