Title :
A gate-controlled silicon light emitting diode
Author :
du Plessis, M. ; Aharoni, H. ; Snyman, LW
Author_Institution :
Dept. of Electr. & Electron. Eng., Pretoria Univ., South Africa
fDate :
6/21/1905 12:00:00 AM
Abstract :
A gate-controlled Si-LED is described where the light intensity is modulated via an insulated MOS gate voltage. It is found that the light intensity is a quadratic function of the applied gate voltage. This nonlinear relationship facilitates new applications, such as the mixing of electrical input signals and modulating the optical output signal
Keywords :
MIS devices; elemental semiconductors; equivalent circuits; light emitting diodes; optical modulation; semiconductor device models; silicon; Si; Si gate-controlled LED; Si light emitting diode; applied gate voltage; insulated MOS gate voltage; light intensity modulation; nonlinear relationship; quadratic function; BiCMOS integrated circuits; CMOS technology; Intensity modulation; Light emitting diodes; Lighting control; Optical modulation; Signal processing; Silicon; Stimulated emission; Voltage;
Conference_Titel :
Africon, 1999 IEEE
Conference_Location :
Cape Town
Print_ISBN :
0-7803-5546-6
DOI :
10.1109/AFRCON.1999.821941
