DocumentCode
1598962
Title
Observations on defects and contact modes for locally grown CNTs
Author
Ta, Bao Quoe ; Nguyen, Huy Quoe ; Hoivik, Nils ; Halvorsen, Einar ; Aasmundtveit, Knut K.
Author_Institution
Dept. of Micro- & Nano-Syst. Technol. (IMST), Vestfold Univ. Coll. (HiVe), Tonsberg, Norway
fYear
2012
Firstpage
1
Lastpage
6
Abstract
Local synthesis and direct integration of Carbon Nanotubes (CNTs) with Si microstructures at room temperature has opened the prospects of a low-cost, wafer-level and CMOS-compatible processing of CNT-based devices. However, the performance of such devices depends upon the quality of CNTs and the contact between CNTs and the silicon structure. Therefore, the defects of CNTs and the CNT-silicon contacts need to be examined. In this paper, Scanning Electron Microscopy (SEM) observations are reported. Three types of CNT defects were observed: voids, branches, and coating flakes. The varying density and diameter distribution of CNTs grown along the microstructure were also revealed. The observations provide a better understanding of the local synthesis process.
Keywords
carbon nanotubes; elemental semiconductors; nanofabrication; scanning electron microscopy; semiconductor-insulator-semiconductor structures; silicon; voids (solid); CMOS-compatible processing; CNT defects; CNT structure; CNT-based devices; CNT-silicon contact mode; SEM; Si microstructures; Si-C-Si; branches; carbon nanotubes; coating flakes; diameter distribution; local synthesis; scanning electron microscopy; silicon structure; temperature 293 K to 298 K; voids; Annealing; Indexes; Iron; Lead; CMOS compatibility; CNT defects; Carbon nanotubes; Local synthesis; contact resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6322008
Filename
6322008
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