Title :
NV-DICE: A Ferroelectric Nonvolatile DICE Storage Element for Tolerance to Single Event Upsets
Author :
Zhai Ya-Hong ; Li Wei ; Li Ping ; Hu Bin ; Gu Ke ; Fan Xue
Author_Institution :
State key Lab. of Electr. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
This paper proposes a new nonvolatile Dual Interlocked Cell (NV-DICE) storage element. The cell includes a DICE latch and four backup ferroelectric capacitors. It can perform store automatically when the power is off abruptly and has high tolerance to SEU. READ and WRITE operations in this cell were simulated by HSIM. Single Event Upset (SEU) of the cell were simulated by Sentaurus simulation tools at 0.13μm feature size. The developed NV-DICE can be applied to nonvolatile FPGA and standard ASICs which require high tolerance to SEU.
Keywords :
ferroelectric storage; field programmable gate arrays; random-access storage; DICE latch; HSIM; NV-DICE; Sentaurus simulation tools; backup ferroelectric capacitors; ferroelectric nonvolatile DICE storage element; nonvolatile FPGA; nonvolatile dual interlocked cell storage element; single event upsets; standard ASIC; Capacitors; Field programmable gate arrays; Integrated circuit modeling; Nonvolatile memory; Simulation; Single event upset; Solid modeling; DICE; Ferroelectric Capacitors; Nonvolatile; SEU;
Conference_Titel :
Intelligent System Design and Engineering Application (ISDEA), 2012 Second International Conference on
Conference_Location :
Sanya, Hainan
Print_ISBN :
978-1-4577-2120-5
DOI :
10.1109/ISdea.2012.645
