Title :
FOXFET in PIN diode strip detector [X-ray mammography]
Author :
Vrtacnik, D. ; Krizaj, D. ; Resnik, D. ; Amon, S.
Author_Institution :
Lab. of Microsensor Structures, Fac. of Electr. Eng., Ljubljana, Slovenia
fDate :
6/21/1905 12:00:00 AM
Abstract :
Simulation and operation of a field oxide FET (FOXFET) biasing structure in a fabricated AC coupled single-sided strip detector are presented. The spatial distribution of the current density was explained by examination of the electric potential distribution and carrier concentration in the channel region of the FOXFET. The results presented confirm that incorporation of the FOXFET biasing structure is justified
Keywords :
MOSFET; X-ray detection; carrier density; current density; elemental semiconductors; mammography; microstrip components; p-i-n diodes; silicon; silicon radiation detectors; AC coupled single-sided strip detector; FOXFET biasing structure; PIN diode strip detector; Si; X-ray mammography; X-ray strip detector; carrier concentration; channel region; current density; electric potential distribution; full-depletion mode; microstrip detectors; spatial distribution; Electrodes; Energy resolution; Fabrication; Leakage current; Microstrip; Silicon; Strips; Voltage; X-ray detection; X-ray detectors;
Conference_Titel :
Africon, 1999 IEEE
Conference_Location :
Cape Town
Print_ISBN :
0-7803-5546-6
DOI :
10.1109/AFRCON.1999.821948
