Coupling analysis of through-silicon via (TSV) arrays in silicon interposers for 3D systems

Author

Biancun Xie ; Swaminathan, M. ; Ki Jin Han ; Jianyong Xie

Author_Institution

Interconnect & Packaging Center, Georgia Inst. of Technol., Atlanta, GA, USA

fYear

2011

Firstpage

16

Lastpage

21

Abstract

This paper investigates the coupling effect between through-silicon vias (TSVs) in large TSV array structures. A coupling analysis method for large TSV arrays is proposed. Using this method the importance of coupling between TSVs for low resistivity silicon substrates is quantified both in the frequency and time domain. This has been compared with high resistivity silicon substrates. The comparison between the two indicates the importance of jitter and voltage analysis in TSV arrays for low resistivity silicon substrates due to enhanced coupling.

Keywords

electrical resistivity; elemental semiconductors; network analysis; silicon; three-dimensional integrated circuits; 3D systems; Si; TSV; coupling analysis; frequency domain; low resistivity silicon substrates; silicon interposers; through-silicon via arrays; time domain; voltage analysis; Conductivity; Conductors; Couplings; Mathematical model; Silicon; Substrates; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility (EMC), 2011 IEEE International Symposium on

Conference_Location

Long Beach, CA, USA

ISSN

2158-110X

Print_ISBN

978-1-4577-0812-1

Type

conf

DOI

10.1109/ISEMC.2011.6038277

Filename

6038277