DocumentCode :
159969
Title :
Optimization of energy capability in power semiconductor devices
Author :
Liu Chen ; Deckers, Margarete ; Sander, Rainald
Author_Institution :
Infineon Technol. AG, Neubiberg, Germany
fYear :
2014
fDate :
16-18 Sept. 2014
Firstpage :
1
Lastpage :
5
Abstract :
Trends in power semiconductor devices are towards high integration and high performance, which impose ever increasing demands on their energy capability. The purpose of this paper is to demonstrate possibilities for optimization of the energy capability by considering the stack of layers in the power device and system for automotive applications. We classify the operation profiles into 3 categories: short pulse e.g. load short circuits (~100μs); medium pulse e.g. bulb or motor inrush (~ms range); and continuous power as in steady state. We demonstrate the impact parameters for these three application categories, in particular addressing how they interact with each other. In the end, optimization guidelines are presented which enable designers to achieve high system performance.
Keywords :
optimisation; power semiconductor devices; automotive applications; bulb; energy capability optimization; impact parameters; load short circuits; medium pulse; motor inrush; power semiconductor devices; short pulse; Conductivity; Metals; Microassembly; Optimization; Silicon; Temperature measurement; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics System-Integration Technology Conference (ESTC), 2014
Conference_Location :
Helsinki
Type :
conf
DOI :
10.1109/ESTC.2014.6962726
Filename :
6962726
Link To Document :
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