DocumentCode
159969
Title
Optimization of energy capability in power semiconductor devices
Author
Liu Chen ; Deckers, Margarete ; Sander, Rainald
Author_Institution
Infineon Technol. AG, Neubiberg, Germany
fYear
2014
fDate
16-18 Sept. 2014
Firstpage
1
Lastpage
5
Abstract
Trends in power semiconductor devices are towards high integration and high performance, which impose ever increasing demands on their energy capability. The purpose of this paper is to demonstrate possibilities for optimization of the energy capability by considering the stack of layers in the power device and system for automotive applications. We classify the operation profiles into 3 categories: short pulse e.g. load short circuits (~100μs); medium pulse e.g. bulb or motor inrush (~ms range); and continuous power as in steady state. We demonstrate the impact parameters for these three application categories, in particular addressing how they interact with each other. In the end, optimization guidelines are presented which enable designers to achieve high system performance.
Keywords
optimisation; power semiconductor devices; automotive applications; bulb; energy capability optimization; impact parameters; load short circuits; medium pulse; motor inrush; power semiconductor devices; short pulse; Conductivity; Metals; Microassembly; Optimization; Silicon; Temperature measurement; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics System-Integration Technology Conference (ESTC), 2014
Conference_Location
Helsinki
Type
conf
DOI
10.1109/ESTC.2014.6962726
Filename
6962726
Link To Document