• DocumentCode
    159969
  • Title

    Optimization of energy capability in power semiconductor devices

  • Author

    Liu Chen ; Deckers, Margarete ; Sander, Rainald

  • Author_Institution
    Infineon Technol. AG, Neubiberg, Germany
  • fYear
    2014
  • fDate
    16-18 Sept. 2014
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    Trends in power semiconductor devices are towards high integration and high performance, which impose ever increasing demands on their energy capability. The purpose of this paper is to demonstrate possibilities for optimization of the energy capability by considering the stack of layers in the power device and system for automotive applications. We classify the operation profiles into 3 categories: short pulse e.g. load short circuits (~100μs); medium pulse e.g. bulb or motor inrush (~ms range); and continuous power as in steady state. We demonstrate the impact parameters for these three application categories, in particular addressing how they interact with each other. In the end, optimization guidelines are presented which enable designers to achieve high system performance.
  • Keywords
    optimisation; power semiconductor devices; automotive applications; bulb; energy capability optimization; impact parameters; load short circuits; medium pulse; motor inrush; power semiconductor devices; short pulse; Conductivity; Metals; Microassembly; Optimization; Silicon; Temperature measurement; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics System-Integration Technology Conference (ESTC), 2014
  • Conference_Location
    Helsinki
  • Type

    conf

  • DOI
    10.1109/ESTC.2014.6962726
  • Filename
    6962726