DocumentCode
1599722
Title
The increasing role of modeling in HV & materials engineering
Author
Boggs, Steven A.
Author_Institution
Inst. of Mater. Sci., Univ. of Connecticut, Storrs, CT, USA
fYear
2010
Firstpage
1
Lastpage
14
Abstract
The range of problems in high voltage and materials engineering which can be addressed through mathematical and numerical modeling has expanded with the reduction in the price of computing power. Presently, very complex transient nonlinear finite element problems can be solved in both 2D and 3D. In addition, density functional theory (DFT), the most useful implementation of computational quantum mechanics, allows material properties, such as dielectric constant, band offsets, band gap and impurity states therein, etc. to be computed at a molecular level, including the effects of compatibilizing agents between inorganic fillers and polymer matrices. These effects become especially important at the nano level, where the oxidation of the surface of a nanoparticle can, in some cases, change its dielectric properties completely. The role of the more sophisticated forms of numerical modeling presently available will be explored through applications to lightning arresters, materials design, etc.
Keywords
engineering computing; high-voltage engineering; band gap; band offsets; density functional theory; dielectric constant; dielectric properties; high voltage engineering; impurity states; inorganic fillers; material properties; materials engineering; mathematical modeling; numerical modeling; polymer matrices; transient nonlinear finite element problems; Density functional theory; Finite element methods; Material properties; Mathematical model; Numerical models; Power engineering and energy; Power engineering computing; Quantum computing; Quantum mechanics; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation (ISEI), Conference Record of the 2010 IEEE International Symposium on
Conference_Location
San Diego, CA
ISSN
1089-084X
Print_ISBN
978-1-4244-6298-8
Type
conf
DOI
10.1109/ELINSL.2010.5549798
Filename
5549798
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