Raman spectroscopy study of stress in 3D-stacked chips and correlation with FEM and electrical measurements

Author

De Wolf, Ingrid ; Lofrano, M. ; Simons, V. ; Cherman, V. ; De Vos, J. ; Van der Plas, G. ; Beyne, Eric

Author_Institution

Dept. MTM, KU Leuven, Leuven, Belgium

fYear

2014

fDate

16-18 Sept. 2014

Firstpage

1

Lastpage

6

Abstract

Micro-Raman spectroscopy (μRS), finite element modelling, and electrical measurements of transistors used as stress-sensors, are used to study stress in a 3D-stacked IC. It is shown that the combination micro-bumps/underfill causes large stress variations in the silicon. Correlation of the three techniques shows that the effect of the different stress components and of X-sectioning on stress reduction has to be taken into account when performing μRS measurements on the X-section of a sample.

Keywords

Raman spectroscopy; finite element analysis; integrated circuit measurement; integrated circuit modelling; sensors; stress measurement; three-dimensional integrated circuits; μRS; 3D-stacked IC; 3D-stacked chips; FEM; X-sectioning; electrical measurements; finite element modelling; microRaman spectroscopy; microbump-underfill; stress components; stress reduction; stress variations; stress-sensors; transistors; Current measurement; Field effect transistors; Finite element analysis; Position measurement; Silicon; Stress; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics System-Integration Technology Conference (ESTC), 2014

Conference_Location

Helsinki

Type

conf

DOI

10.1109/ESTC.2014.6962729

Filename

6962729