High-power and high-speed semiconductor switch RSD applied in pulsed power system

Based on the controllable plasma layer conversion principle, the new-type semiconductor pulsed power switch reversely switched dynistor (RSD) turns on uniformly and simultaneously over the whole chip area. It has the advantages of high power and high speed at the same time. The blocking, turn-on and turn-off characteristics of RSD are investigated in this paper systematically. The off-state and on-state characteristics get a trade-off by an optimal design method. The equations during turn-on and turn-off process are obtained by analyzing the carrier motion on different conditions. Then two important parameters, the turn-on voltage and reverse recovery time, are calculated. In the single pulse experiment, peak currents of 21.6 kA and 42.0 kA (pulse widths of 30 mus and 200 mus) are acquired on 20 mm and 40 mm diameter stacks respectively, which have reached the utmost value. In the repetitive frequency experiment, output waveform of 20 Hz is acquired at 4 kV with a resonant triggering way.