• DocumentCode
    1600312
  • Title

    Bitline separated gated multi-bit (BS-GMB) SONOS for high density flash memory

  • Author

    Shim, Won Bo ; Kim, Seunghyun ; Kim, Yoon ; Park, Se Hwan ; Kim, Sungjun ; Park, Euyhwan ; Park, Byung-Gook

  • Author_Institution
    Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A novel bitline separated gated multi-bit (BS-GMB) SONOS memory for high density flash memory is newly introduced. Bitline separation method can decrease the number of gate contacts, and simplify the gate contact interconnection. 2N memory nodes with single crystalline silicon channel can be realized in 8F2 size with this structure.
  • Keywords
    flash memories; BS-GMB SONOS memory; bitline separation method; gate contact interconnection; gated multibit SONOS memory; high density flash memory; single crystalline silicon channel; Flash memory; Logic gates; Periodic structures; SONOS devices; Stacking;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
  • Conference_Location
    Birmingham
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4673-2198-3
  • Type

    conf

  • DOI
    10.1109/NANO.2012.6322053
  • Filename
    6322053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1600312