Title :
Modeling and simulation of semiconductor nanowire lasers
Author :
Maslov, A.V. ; Ning, C.Z.
Author_Institution :
NASA Ames Center for Nanotechnol., Moffett Field, CA, USA
Abstract :
We review the basic modal properties of semiconductor nanowires which are required to evaluate their performance as lasers. These properties include the dispersions for guided modes, mode spacing, reflectivities from the nanowire facets, directionality and polarization of far fields, and confinement factors. We also discuss features that distinguish nanowire lasers from the usual heterostructure lasers.
Keywords :
laser modes; light polarisation; nanowires; optical dispersion; reflectivity; semiconductor device models; semiconductor lasers; semiconductor quantum wires; confinement factors; far field directionality; far field polarization; guided mode dispersions; modal properties; mode spacing; nanowire facets; nanowire lasers; reflectivities; semiconductor lasers; Chemical lasers; Gallium nitride; Laser modes; Laser theory; Optical arrays; Q factor; Reflectivity; Semiconductor laser arrays; Semiconductor lasers; Zinc oxide;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN :
0-7803-8530-6
DOI :
10.1109/NUSOD.2004.1345080
