Direct-write patterning of metals and graphene oxide electrodes by arc erosion for organic device manufacturing

Electric arc erosion performed at low continuous voltages has been recently proven as a successful patterning technique for thin films of different conductive materials. In this work, we present an application of this procedure to materials typically aimed for device electrodes, such as indium tin oxide (ITO), gold (Au), graphene oxide (GO) or aluminum doped zinc oxide (AZO), as well as a more in depth study of the electrical discharge generation at submicron scale, which allows optimizing the procedure.