Gadolinium scandate by high pressure sputtering as a high-k dielectric

Author

Feijoo, P.C. ; Pampillon, M.A. ; Andres, E.S.

Author_Institution

Dipt. Fis. Aplic. III: Electr. y Electron., Univ. Complutense de Madrid, Madrid, Spain

fYear

2013

Firstpage

17

Lastpage

20

Abstract

We demonstrate the viability of gadolinium scandate (Gd_2-xSc_xO₃) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd_2-xSc_xO₃/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScO_x and GdO_x in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.

Keywords

MIS capacitors; annealing; elemental semiconductors; gadolinium compounds; high-k dielectric thin films; leakage currents; platinum; silicon; sputter deposition; MIS devices; Pt-Gd_2-xSc_xO₃-Si; annealing; binary compounds; gadolinium oxide; gadolinium scandate; high pressure sputter deposition; high-k dielectric material; leakage currents; scandium oxide; size 8 nm; Annealing; Dielectrics; Leakage current; Logic gates; MIS devices; Permittivity; Silicon; gadolinium scan date; high k dielectrics; high pressure sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481331

Filename

6481331