Title :
Etching of AIGaN/GaN HEMT structures by Cl2-based ICP
Author :
Gao, Zhen ; Romero, M.F. ; Calle, F.
Author_Institution :
Dipt. Ing. Electron., Univ. Politec. de Madrid, Madrid, Spain
Abstract :
AIGaN/GaN mesa etching using different plasma combinations of Cl2/Ar, Cl2/BCl3 and Cl2/CF4 by inductively coupled plasma was investigated. It was observed that the etch rate of Cl2/Ar increases linearly with the Ar content. In contrast to the Ar-based mixtures, Cl2/BCl3 and Cl2/CF4 plasma combinations show a damage-free surface. Furthermore, the lowest isolation current values achieved in devices with reduced sheet resistance were achieved by using Cl2/BCl3 plasma.
Keywords :
III-V semiconductors; aluminium compounds; argon; boron compounds; carbon compounds; chlorine; gallium compounds; high electron mobility transistors; sputter etching; wide band gap semiconductors; AlGaN-GaN; Cl2-Ar; Cl2-BCl3; Cl2-CF4; HEMT structure etching; damage-free surface; inductively coupled plasma etching; mesa etching; reduced sheet resistance; Aluminum gallium nitride; Argon; Etching; Gallium nitride; HEMTs; Plasmas; AIGaNIGaN; Cl2-based ICP; HEMT; mesa etching; styling;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481334
