Title :
Characterization of large area Cu(In,Ga)Se2 nanotip arrays via photoluminescence
Author :
Liao, Yu-Kuang ; Lin, Woei-Tyng ; Hsieh, Dan-Hua ; Kuo, Shou-Yi ; Lai, Fang-I ; Chueh, Yu-Lun ; Kuo, Hao-Chung
Author_Institution :
Dept. of Electro-Phys., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this study, photoluminescence (PL) measurements were used to characterized Cu(In,Ga)Se2 nanotip arrays (CIGS NTRs). Large area CIGS NTRs were yielded by using one step Ar+ milling process without template. Formation mechanism of NTRs is due to a highly anisotropic milling effect of the quaternary components compound. In both CIGS thin films with and without NTRs, saturation effects of Donor-Acceptor Pair (DAP) had been observed while excitation power dependence PL measurements. Comparing with thin film CIGS without NTRs, it has revealed that the concentration DAP had been changed after formation of CIGS NTRs and had enhanced its carrier density of the p-type semiconductor.
Keywords :
carrier density; copper compounds; gallium compounds; indium compounds; milling; nanofabrication; nanostructured materials; photoluminescence; semiconductor growth; semiconductor thin films; Cu(InGa)Se2; carrier density; donor-acceptor pair; excitation power; highly anisotropic milling effect; large area nanotip arrays; one step Ar+ milling process; p-type semiconductor; photoluminescence; quaternary components compound; thin films; Charge carrier density; Density measurement; Films; Milling; Photovoltaic cells; Power measurement; Temperature measurement; CIGS; nanotips; photoluminescence; saturation;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
Print_ISBN :
978-1-4673-2198-3
DOI :
10.1109/NANO.2012.6322062
