Title :
Modeling of radiation effects in MOSFETs
Author :
Banqueri, J. ; Carvajal, M.A. ; Palma, Alberto J.
Author_Institution :
Dept. of Electron. & Comput. Technol., Univ. of Granada, Granada, Spain
Abstract :
In this paper, the advances in the modeling of the radiation effects in MOSFETs will be briefly exposed. The change of the threshold voltage, mobility, subthreshold swing and the low frequency noise with the ionizing radiation will be shown and, if possible, modeled. Finally, the use of the MOSFET as dosimeter, mainly for clinical use, will be detailed, where our contribution in the readout techniques will be detailed in order to obtain a low-cost high performance dosimetric verification system.
Keywords :
MOSFET; dosimetry; radiation hardening (electronics); semiconductor device models; MOSFET; dosimetric verification system; ionizing radiation; low frequency noise; mobility; radiation effect modeling; readout technique; subthreshold swing; threshold voltage; Fading; MOSFETs; Radiation effects; Sensitivity; Threshold voltage; Voltage measurement; MOSFET; dosimetry; fading; ionizing radiation; threshold voltage;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481335
