Title :
TCAD simulation of optical far field for an edge emitting semiconductor laser
Author :
Laino, Valerio ; Witzigmann, Bemd ; Pfeiffer, Michael ; Mueller, Juergen ; Schmidt, Berthold
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Switzerland
Abstract :
This work presents a microscopic 2-dimensional TCAD (technology computer aided design) simulation of an edge-emitting laser (EEL), with the objective to investigate the effect of temperature and carrier distribution on the spatial distribution of optical intensity. Simulation of the optical far field pattern is crucial in order to optimize the coupling efficiency of the laser with the optical fiber and single mode stability. The device under investigation is an InGaAs/AlGaAs narrow stripe laser with graded index carrier confinement (GRICC) and single quantum well (SQW) active region manufactured by Bookham. A fully self-consistent electro-optical-thermal model, consisting of Helmholtz equation, Poisson´s equation, drift diffusion equations, heat transport equation and photon rate equation is calibrated with far field measurements taken at different driving currents and ambient temperatures.
Keywords :
CAD; Helmholtz equations; III-V semiconductors; Poisson equation; calibration; electro-optical effects; gallium arsenide; gradient index optics; indium compounds; laser cavity resonators; laser modes; laser stability; optical engineering computing; optical fibres; quantum well lasers; semiconductor device models; surface emitting lasers; thermo-optical effects; Helmholtz equation; InGaAs-AlGaAs; InGaAs/AlGaAs laser; Poisson equation; TCAD simulation; carrier distribution; coupling efficiency; drift diffusion equations; edge emitting laser; electro-optical-thermal model; far field measurements; graded index carrier confinement; heat transport equation; microscopic 2-dimensional TCAD; narrow stripe laser; optical far field pattern; optical fiber; optical intensity; photon rate equation; semiconductor laser; single mode stability; single quantum well active region; spatial distribution; technology computer aided design; temperature effect; Computational modeling; Differential equations; Fiber lasers; Laser modes; Laser stability; Lasers and electrooptics; Optical microscopy; Poisson equations; Semiconductor lasers; Stimulated emission;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN :
0-7803-8530-6
DOI :
10.1109/NUSOD.2004.1345087
