Title :
Monte Carlo analysis of thermal effects in self-switching diodes
Author :
Millithaler, Jean-Francois ; Iniguez-de-la-Torre, I. ; Gonzalez, Temoatzin ; Mateos, Javier ; Sangare, Paul ; Ducournau, Guillaume ; Gaquiere, Christopher
Author_Institution :
Dept. de Fsica Aplic., Univ. de Salamanca, Salamanca, Spain
Abstract :
An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.
Keywords :
Gunn diodes; III-V semiconductors; Monte Carlo methods; gallium compounds; microwave oscillators; wide band gap semiconductors; GaN; I-V characteristic; Monte Carlo analysis; SSD; asymetric planar GaN; high frequency Gunn oscillation; self-switching diode; static behavior; terahertz radiation; thermal effect; Gallium nitride; Oscillators; Semiconductor device measurement; Temperature; Temperature measurement; Thermal resistance;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481338
