Monte Carlo analysis of thermal effects in self-switching diodes

Author

Millithaler, Jean-Francois ; Iniguez-de-la-Torre, I. ; Gonzalez, Temoatzin ; Mateos, Javier ; Sangare, Paul ; Ducournau, Guillaume ; Gaquiere, Christopher

Author_Institution

Dept. de Fsica Aplic., Univ. de Salamanca, Salamanca, Spain

fYear

2013

Firstpage

45

Lastpage

48

Abstract

An attempt of exploitation of very high frequency Gunn oscillations to generate a TeraHertz radiation is realized with an asymetric planar GaN self-switching diode. In this work we compare the measured static behavior of real devices with calculations performed by means of Monte Carlo simulations. We analyze the influence of the temperature on the I-V characteristic of the SSD and also on the high frequency oscillations.

Keywords

Gunn diodes; III-V semiconductors; Monte Carlo methods; gallium compounds; microwave oscillators; wide band gap semiconductors; GaN; I-V characteristic; Monte Carlo analysis; SSD; asymetric planar GaN; high frequency Gunn oscillation; self-switching diode; static behavior; terahertz radiation; thermal effect; Gallium nitride; Oscillators; Semiconductor device measurement; Temperature; Temperature measurement; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481338

Filename

6481338