A gate drive circuit of power MOSFETs and IGBTs for low switching losses

In order to increase the power density of power converters, reduction of the switching losses at a high-frequency switching condition is one of the most important issues. This paper presents a new gate drive circuit that enables to reduce the switching loss on both the power MOSFET and the IGBT. A distinctive feature of this method is that both the turn on loss and the turn off loss can be decreased simultaneously without using the conventional ZVS circuit, such as quasi-resonant adjunctive circuit. Some experimental results of the switching loss of power MOSFET and IGBT used on the buck-chopper circuit is shown and confirmed the effectiveness of the proposed circuit.