Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport

Author

Causa, C. ; Rengel, Raul ; Martin, Maria J.

Author_Institution

Dept. of Appl. Phys., Univ. of Salamanca, Salamanca, Spain

fYear

2013

Firstpage

63

Lastpage

66

Abstract

This paper presents a detailed study (using a 2D Monte Carlo simulator) of the impact on electronic transport of dopant segregation layers in Schottky Barrier MOSFETs operating under the linear regime. It is shown that with a careful control of the layer parameters the performance of the devices are significantly improved, with a boosting of the drive current and an important reduction of the linear resistance (Rds(on)). The origin of these advantages can be related to internal microscopic transport quantities like transit time, distance travelled, scattering mechanisms, etc. The enhanced performance of Schottky Barrier MOSFETs including dopant segregation layers confirms the suitability of this technology to help extending the IRTS roadmap for Silicon MOS devices.

Keywords

MOSFET; Monte Carlo methods; Schottky barriers; 2D Monte Carlo simulator; IRTS roadmap; Schottky barrier MOSFET; distance travelled; dopant segregation layers; drive current; electronic transport; internal microscopic transport quantities; linear resistance reduction; scattering mechanisms; silicon MOS devices; transit time; Doping; Impurities; MOSFETs; Microscopy; Monte Carlo methods; Scattering; Schottky barriers; Dopant segregation layer; Monte Carlo; Schottky barrier MOSFET; linear regime;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2013 Spanish Conference on

Conference_Location

Valladolid

Print_ISBN

978-1-4673-4666-5

Electronic_ISBN

978-1-4673-4667-2

Type

conf

DOI

10.1109/CDE.2013.6481343

Filename

6481343