DocumentCode :
1600942
Title :
Nanoscale engineering of photoelectron processes by charging quantum dots
Author :
Sergeev, Andrei ; Vagidov, Nizami ; Mitin, Vladimir ; Sablon, Kimberly ; Little, John
Author_Institution :
SUNY Res. Found., Univ. at Buffalo, Buffalo, NY, USA
fYear :
2012
Firstpage :
1
Lastpage :
5
Abstract :
Novel approach to control of photoelectron processes is based on nanoscale engineering of 3D potential profile employing quantum dots with built-in charge (Q-BIC). Charging of quantum dots creates local potential barriers around single dots, if dots are arbitrary distributed in the medium, and collective barriers around dot clusters, rows etc, if quantum dots form specific structures. Manipulations with potential barriers provide an effective tool for suppression of fast capture processes of photocarriers by quantum dots. This allows one to increase the photocarrier lifetime and to reduce the recombination losses. The charging of dots also enhances the electron coupling to infrared radiation and multi-step absorption of sub-gap photons. Q-BIC nanomaterials have a number of attractive features to be used in photovoltaic and sensing applications.
Keywords :
electron-hole recombination; nanostructured materials; photoelectron spectra; quantum dots; solar cells; 3D potential profile; Q-BIC; built in charge; fast capture process; local potential barrier; nanoscale engineering; photocarrier lifetime; photoelectron process; quantum dot charging; recombination loss; Electric potential; Nanoscale devices; Photovoltaic systems; Quantum dots; Radiative recombination; US Department of Transportation; infrared harvesting; photodetectors; photoelectron lifetime; photovoltaic nanomaterials; quantum dot media;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
ISSN :
1944-9399
Print_ISBN :
978-1-4673-2198-3
Type :
conf
DOI :
10.1109/NANO.2012.6322075
Filename :
6322075
Link To Document :
بازگشت