DocumentCode
1600942
Title
Nanoscale engineering of photoelectron processes by charging quantum dots
Author
Sergeev, Andrei ; Vagidov, Nizami ; Mitin, Vladimir ; Sablon, Kimberly ; Little, John
Author_Institution
SUNY Res. Found., Univ. at Buffalo, Buffalo, NY, USA
fYear
2012
Firstpage
1
Lastpage
5
Abstract
Novel approach to control of photoelectron processes is based on nanoscale engineering of 3D potential profile employing quantum dots with built-in charge (Q-BIC). Charging of quantum dots creates local potential barriers around single dots, if dots are arbitrary distributed in the medium, and collective barriers around dot clusters, rows etc, if quantum dots form specific structures. Manipulations with potential barriers provide an effective tool for suppression of fast capture processes of photocarriers by quantum dots. This allows one to increase the photocarrier lifetime and to reduce the recombination losses. The charging of dots also enhances the electron coupling to infrared radiation and multi-step absorption of sub-gap photons. Q-BIC nanomaterials have a number of attractive features to be used in photovoltaic and sensing applications.
Keywords
electron-hole recombination; nanostructured materials; photoelectron spectra; quantum dots; solar cells; 3D potential profile; Q-BIC; built in charge; fast capture process; local potential barrier; nanoscale engineering; photocarrier lifetime; photoelectron process; quantum dot charging; recombination loss; Electric potential; Nanoscale devices; Photovoltaic systems; Quantum dots; Radiative recombination; US Department of Transportation; infrared harvesting; photodetectors; photoelectron lifetime; photovoltaic nanomaterials; quantum dot media;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location
Birmingham
ISSN
1944-9399
Print_ISBN
978-1-4673-2198-3
Type
conf
DOI
10.1109/NANO.2012.6322075
Filename
6322075
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