Title :
Pyroelectric PbTiO/sub 3/ thin films for microsensor applications
Author :
Ye, C. ; Tamagawa, T. ; Polla, D.L.
Author_Institution :
Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Pyroelectric lead titanate thin films (PbTiO/sub 3/) deposited by sol-gel processing have been characterized for possible use in microsensor applications. Pyroelectric properties, crystalline phase, dielectric coefficient, and ferroelectric properties have been investigated. The measured room-temperature pyroelectric coefficient in 0.6- mu m-thick films is 90 nC/cm/sup 2/-K. Based on a comparison of relevant properties with other IC-compatible pyroelectric materials, PbTiO/sub 3/ offers the possibility of achieving an extremely high pyroelectric coefficient over a wide operating temperature range. The authors present the use of PbTiO/sub 3/ as a pyroelectric material integrated with polysilicon microbridge technology. The formation of composite sol-gel PbTiO/sub 3/ thin films on 1.0- mu m-thick polysilicon membranes offers a key advantage of implementing both a low thermal mass and a high pyroelectric sensitivity for uncooled infrared detection.<>
Keywords :
dielectric thin films; electric sensing devices; infrared detectors; integrated circuit technology; lead compounds; pyroelectric devices; pyroelectricity; sol-gel processing; thin film devices; 0.6 micron; IC; PbTiO/sub 3/ thin films; crystalline phase; dielectric coefficient; ferroelectric properties; microsensor; microsensor applications; polysilicon membranes; polysilicon microbridge technology; pyroelectric coefficient; pyroelectric material; pyroelectric thin film; sol-gel processing; uncooled infrared detection; Crystallization; Dielectric measurements; Dielectric thin films; Ferroelectric materials; Infrared detectors; Lead; Microsensors; Pyroelectricity; Sputtering; Titanium compounds;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149033
