DocumentCode :
1601267
Title :
Compact Fabry-Perot electro-optic switch based on n-ZnO/p-Si heterojunction structure
Author :
Ben Masaud, T.M. ; Jaberansary, E. ; Sultan, S.M. ; Clark, O. ; Sharp, T. ; Gunn, R. ; Bagnall, D.M. ; Chong, H.M.H.
Author_Institution :
Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
fYear :
2012
Firstpage :
1
Lastpage :
3
Abstract :
We present a hybrid waveguide-based optical switch using n-ZnO/p-Si heterojunction diode structure. The n-ZnO/p-Si vertical diode is incorporated with a Fabry-Perot microcavity to realize optical switching through electrical biasing. The ZnO layer functions as n-type transparent oxide semiconductor and waveguide cladding. Under 4V reverse bias (depletion), simulation shows a modulation depth of 5.54dB and tunable red-shift of 4nm over a cavity length of 17μm. A Fabry-Perot microcavity of 20μm length has been fabricated and measurement shows a tunable blue-shift of 0.1nm under 10V forward bias condition (accumulation).
Keywords :
electro-optical switches; optical fabrication; silicon; zinc compounds; Fabry-Perot electro-optic switch; Fabry-Perot microcavity; ZnO-Si; electrical biasing; heterojunction diode structure; hybrid waveguide-based optical switch; layer functions; n-type transparent oxide semiconductor; optical switching; vertical diode; voltage 4 V; waveguide cladding; wavelength 0.1 nm; wavelength 17 mum; wavelength 20 mum; wavelength 4 nm; Optical device fabrication; Optical fibers; Optical films; Optical imaging; Optical refraction; Optical switches; Fabry-Perot modulator; Silicon photonics; heterojunction; plasma dispersion effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
Conference_Location :
Birmingham
ISSN :
1944-9399
Print_ISBN :
978-1-4673-2198-3
Type :
conf
DOI :
10.1109/NANO.2012.6322085
Filename :
6322085
Link To Document :
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