Title :
The comparison of modern SiC power devices
Author :
Avram, Manoara ; Brezeanu, Gheorghe ; Poenar, Daniel Puiu
Author_Institution :
Nat. Inst. for Res. & Dev. in Microtechnologies, Bucharest, Romania
Abstract :
A comparative study on high voltage MOSFET and IGBT devices (internal cell electrical characteristics) demonstrate the similarity of both devices. This paper presents an analysis of the static and dynamic behavior of a 2 kV SiC MOSFET and IGBT. The IGBT can block voltages up to 1800 V (for VGS=-80 V), with a specific on-resistance as low as 13 mWcm2, 100 - 200 lower than similar IGBT on Si. Comparing the circuit performance to that of a SiC IGBT, it turns out is almost twice faster than the MOSFET.
Keywords :
insulated gate bipolar transistors; power MOSFET; silicon compounds; wide band gap semiconductors; 2 kV; IGBT devices; MOSFET devices; modern SiC power devices; specific on-resistance; Bipolar transistors; Conductivity; Insulated gate bipolar transistors; MOSFET circuits; Power MOSFET; Power dissipation; Semiconductor materials; Silicon carbide; Substrates; Voltage;
Conference_Titel :
Industrial Technology, 2004. IEEE ICIT '04. 2004 IEEE International Conference on
Print_ISBN :
0-7803-8662-0
DOI :
10.1109/ICIT.2004.1490341
