DocumentCode :
1601374
Title :
Terahertz detection using Si-SiGe MODFETs
Author :
Meziani, Y.M. ; Velazquez-Perez, J.E. ; Garcia-Garcia, E. ; Coquillat, Dominique ; Dyakonova, N. ; Knap, Wojciech ; Grigelionis, I. ; Fobelets, K.
Author_Institution :
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
fYear :
2013
Firstpage :
167
Lastpage :
170
Abstract :
We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas along with photoresponse measurements were performed simultaneously to demonstrate that the observed response is related to the plasma waves oscillation in the channel. The device was cooled down to 4.2 K and resonant signature could be observed.
Keywords :
Ge-Si alloys; high electron mobility transistors; silicon; terahertz wave detectors; Si-SiGe; broad band terahertz detection; frequency 0.292 THz; frequency 1.5 THz; nonresonant terahertz detection; plasma waves oscillation; resonant signature; strained MODFET; HEMTs; Logic gates; MODFETs; Oscillators; Plasma waves; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
Type :
conf
DOI :
10.1109/CDE.2013.6481369
Filename :
6481369
Link To Document :
بازگشت