DocumentCode
1601374
Title
Terahertz detection using Si-SiGe MODFETs
Author
Meziani, Y.M. ; Velazquez-Perez, J.E. ; Garcia-Garcia, E. ; Coquillat, Dominique ; Dyakonova, N. ; Knap, Wojciech ; Grigelionis, I. ; Fobelets, K.
Author_Institution
Dept. de Fis. Aplic., Univ. de Salamanca, Salamanca, Spain
fYear
2013
Firstpage
167
Lastpage
170
Abstract
We report on resonant and non-resonant (broad-band) detection of terahertz (THz) radiation using Strained-Si MODFETs. The devices were excited at room temperature by two types of THz sources at 0.292 THz and at 1.5 THz. Non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas along with photoresponse measurements were performed simultaneously to demonstrate that the observed response is related to the plasma waves oscillation in the channel. The device was cooled down to 4.2 K and resonant signature could be observed.
Keywords
Ge-Si alloys; high electron mobility transistors; silicon; terahertz wave detectors; Si-SiGe; broad band terahertz detection; frequency 0.292 THz; frequency 1.5 THz; nonresonant terahertz detection; plasma waves oscillation; resonant signature; strained MODFET; HEMTs; Logic gates; MODFETs; Oscillators; Plasma waves; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location
Valladolid
Print_ISBN
978-1-4673-4666-5
Electronic_ISBN
978-1-4673-4667-2
Type
conf
DOI
10.1109/CDE.2013.6481369
Filename
6481369
Link To Document