Title :
Evaluation of beta -SiC for sensors
Author :
Shor, J.S. ; Goldstein, D. ; Kurtz, A.D.
Author_Institution :
Kulite Semiconduct. Products, Leonia, NJ, USA
Abstract :
The sensor properties of n-type beta -SiC, namely the gauge factor (GF) and temperature coefficient of resistivity (TCR), are reported over a wide range of temperatures. The maximum gauge factor observed was -31.8, which decreases to half its value over the temperature range 25-450 degrees C. Unintentionally doped SiC has a constant TCR of 0.72%/ degrees C over the range 25-800 degrees C and exhibits full impurity ionization at room temperature. Low-resistivity, nitrogen doped SiC is fully ionized at 250 degrees C, above which the resistance increases nonlinearly with temperature. It is shown that n-type beta -SiC has a large strain sensitivity, making it a potentially useful high-temperature sensing element. The piezoresistive properties of SiC can be explained simply by intervalley electron transfer.<>
Keywords :
electric sensing devices; high-temperature techniques; piezoelectric transducers; semiconductor materials; silicon compounds; strain gauges; strain measurement; 25 to 800 degC; 250 degC; SiC:N/sub 2/; constant TCR; gauge factor; high-temperature sensing element; impurity ionization; intervalley electron transfer; n-type beta -SiC; piezoelectric transducer; piezoresistive properties; semiconductor materials; strain gauge; strain sensitivity; temperature coefficient of resistivity; temperature compensation; Capacitive sensors; Conductivity; Electrons; Impurities; Ionization; Nitrogen; Piezoresistance; Silicon carbide; Temperature distribution; Temperature sensors;
Conference_Titel :
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-87942-585-7
DOI :
10.1109/SENSOR.1991.149035
