Title :
Simulation of bandgap in MOVPE selective area growth of InGaAsP-based photonic integrated circuits
Author :
Amin, Ahdullah AI ; Doi, Takeshi ; Sakurai, Kenji ; Zhenrui Zhang ; Song, Xueliang ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
A good deal of consideration is needed in designing the growth masks to get the intended bandgap profile due to a complex interplay of chemical reactions and physical effects such as gas phase diffusion and surface migration. This work presents a simulation tool for selective area growth metal-organic vapor epitaxy (SAG-MOVPE) of InGaAsP-based photonic integrated circuits.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; photonic band gap; reaction rate constants; semiconductor device models; semiconductor growth; semiconductor quantum wells; surface diffusion; vapour phase epitaxial growth; InGaAsP; MOVPE selective area growth; bandgap profile; bandgap simulation; chemical reactions; gas phase diffusion; growth masks; metal-organic vapor epitaxy; multiple quantum wells; photonic integrated circuits; physical effects; surface migration; surface reaction rate constant; Arrayed waveguide gratings; Artificial intelligence; Circuit simulation; Epitaxial growth; Epitaxial layers; Optical surface waves; Optical waveguides; Photonic band gap; Photonic integrated circuits; Semiconductor optical amplifiers;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN :
0-7803-8530-6
DOI :
10.1109/NUSOD.2004.1345127
