• DocumentCode
    1601641
  • Title

    Resistive switching characteristics of Ag2Se thin film

  • Author

    Lee, N.J. ; Park, M.R. ; Yoon, T.S. ; Choi, Y.J. ; Kang, C.J.

  • Author_Institution
    Dept. of Phys., Myongji Univ., Yongin, South Korea
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Electrical properties of silver selenide (Ag2Se) thin film, which is a thickness of 500 nm, were studied using conducting atomic force microscopy (c-AFM). A resistive switching was observed in the sweep voltage range from -7 to +7 V at room temperature. In addition, the Ag/Ag2Se/Au structure was compared with the Ag2Se/Au structure. It was considered that the resistive switching behavior may cause Ag filaments. The typical resistive characteristics of the Ag2Se thin film were presented, and the mechanism was discussed.
  • Keywords
    atomic force microscopy; electrical resistivity; gold; metal-semiconductor-metal structures; metallic thin films; semiconductor thin films; silver; silver compounds; Ag filaments; Ag-Ag2Se-Au; c-AFM; conducting atomic force microscopy; electrical properties; resistive switching characteristics; silver selenide thin film; size 500 nm; sweep voltage; temperature 293 K to 298 K; voltage -7 V to 7 V; Electrodes; Gold; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2012 12th IEEE Conference on
  • Conference_Location
    Birmingham
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4673-2198-3
  • Type

    conf

  • DOI
    10.1109/NANO.2012.6322099
  • Filename
    6322099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1601641