DocumentCode
1601683
Title
Genetic algorithm-based parameter-extraction for power GaAs MESFET
Author
Gao, YiFan
Author_Institution
Chang´´an Univ., Xi´´an, China
Volume
1
fYear
2001
fDate
6/23/1905 12:00:00 AM
Firstpage
317
Abstract
A modified genetic algorithm is presented for parameter extraction of small signal equivalent of microwave power GaAs MESFET. A new approach of genetic algorithm-based model in the paper is applied to determine the equivalent circuit elements of GaAs MESFET directly from measured S-parameters biased in the active region. The results of calculation show that the method presented is suitable for microwave application
Keywords
III-V semiconductors; S-parameters; equivalent circuits; gallium arsenide; genetic algorithms; microwave field effect transistors; microwave power transistors; power MESFET; semiconductor device models; GaAs; GaAs microwave power MESFET; S-parameters; genetic algorithm; parameter extraction; small-signal equivalent circuit model; Biological cells; Equivalent circuits; Gallium arsenide; Genetic algorithms; MESFET circuits; Microwave theory and techniques; Optimization methods; Parameter extraction; Performance analysis; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2001. TELSIKS 2001. 5th International Conference on
Conference_Location
Nis
Print_ISBN
0-7803-7228-X
Type
conf
DOI
10.1109/TELSKS.2001.954900
Filename
954900
Link To Document