DocumentCode
1601706
Title
GaAs piezoelectric modulated resistors for sensor
Author
Huang Qing-An ; Tong Qin-Yi ; Lu Shi-Ji
Author_Institution
Microelectron. Center, Southeast Univ., Nanjing, China
fYear
1991
Firstpage
916
Lastpage
919
Abstract
The authors report the development of GaAs piezoelectric modulated resistors which are very sensitive to stress. A model of the resistors is presented, and simple cantilever experiments confirm that the piezoelectric modulated effect exists in GaAs. The effect is expected to be applied to the monolithic integration of mechanical sensors and signal processing circuits.<>
Keywords
III-V semiconductors; electric sensing devices; gallium arsenide; micromechanical devices; piezoelectric transducers; resistors; stress measurement; GaAs piezoelectric modulated resistors; III-V semiconductor; cantilever; mechanical sensors; monolithic integration; signal processing circuits; stress sensor; Clamps; Doping; Electrons; Gallium arsenide; Geometry; Piezoelectric effect; Piezoelectric films; Piezoelectric polarization; Resistors; Tensile stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1991. Digest of Technical Papers, TRANSDUCERS '91., 1991 International Conference on
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-87942-585-7
Type
conf
DOI
10.1109/SENSOR.1991.149036
Filename
149036
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