Title :
Gain dependent avalanche duration and gain × bandwidth product in an avalanche photodiode
Author :
Groves, C. ; David, J.P.R. ; Rees, G.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
This study calculates the probability distributions of gain and duration, fM,T(M,T) for an avalanche photodiode. This work assumes both constant and enhanced velocities to ionisation and compares their effects on gain × bandwidth product.
Keywords :
avalanche photodiodes; impact ionisation; statistical distributions; stochastic processes; avalanche photodiode; constant velocities; enhanced velocities; gain × bandwidth product; gain dependent avalanche duration; impact ionisation; probability distributions; stochastic process; Absorption; Avalanche photodiodes; Bandwidth; Charge carrier processes; Delay; Electrons; Impact ionization; Probability distribution; Space exploration; Stochastic processes;
Conference_Titel :
Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on
Print_ISBN :
0-7803-8530-6
DOI :
10.1109/NUSOD.2004.1345131
