DocumentCode :
1601764
Title :
Modelling the thermal conductivity of semiconductor NWs; a step forward to the increase of the thermoelectric figure of merit
Author :
Anaya, Jose Javier ; Jimenez, Joaquin ; Rodriguez, Taniana
Author_Institution :
GdS Optronlab, Univ. de Valladolid, Valladolid, Spain
fYear :
2013
Firstpage :
219
Lastpage :
222
Abstract :
Low dimensional semiconductor structures are very promising for thermoelectric conversion. In particular, the thermal conductivity of semiconductor nanowires (NWs) can be engineered in order to enhance the thermoelectric figure of merit. Modeling the thermal conductivity of NWs is a step forward to the design of advanced thermoelectric devices.
Keywords :
elemental semiconductors; nanowires; silicon; thermal conductivity; thermoelectricity; Si; advanced thermoelectric devices; low-dimensional semiconductor structures; semiconductor nanowires; thermal conductivity; thermoelectric conversion; thermoelectric figure-of-merit; Conductivity; Lattices; Phonons; Scattering; Silicon; Temperature distribution; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
Type :
conf
DOI :
10.1109/CDE.2013.6481382
Filename :
6481382
Link To Document :
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