Numerical analysis of effects of incident light intensities on extinction ratio and α parameter of InGaAsP-InP multi-quantum-well modulator

Author

Nomura, Yoshinori ; Akiyama, Koichi ; Tomita, Nobuyuki ; Nishimura, Tetsuya ; Isu, Toshiro

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Hyogo, Japan

fYear

2004

Firstpage

36

Lastpage

37

Abstract

This work presents the modeling of multi-quantum well (MQW) electroabsorption modulators (EAMs), in which photo-induced currents are implemented, and demonstrated. The performance of MQW EAMs is simulated when the incident light is highly intensive. Dependencies of EAM performance on the QW structure are also discussed.

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; quantum well devices; semiconductor device models; InGaAsP-InP; InGaAsP-InP modulator; alpha; electroabsorption modulators; extinction ratio; highly intensive incident light; incident light intensities; multiquantum-well modulator; parameter; photoinduced currents; Charge carrier density; Extinction ratio; Insertion loss; Intensity modulation; Numerical analysis; Optical modulation; Optical saturation; Poisson equations; Quantum well devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Numerical Simulation of Optoelectronic Devices, 2004. NUSOD '04. Proceedings of the 4th International Conference on

Print_ISBN

0-7803-8530-6

Type

conf

DOI

10.1109/NUSOD.2004.1345136

Filename

1345136