Multi-subband electron mobility in AlGaAs parabolic quantum wells

Author

Palo, Scott ; Sahoo, N. ; Sahu, Trinath ; Panda, Anup Kumar

Author_Institution

Dept. of ECE, Kalam Inst. of Technol., Berhampur, India

fYear

2014

fDate

9-11 Jan. 2014

Firstpage

1

Lastpage

4

Abstract

We analyze the enhancement of multisubband electron mobility in delta-doped Al_xGa_1-xAs parabolic quantum well structures. We show that mobility is considerably enhanced in a parabolic quantum well compared to that in a square quantum well due to shifting of subband electron wave functions towards the centre of the well through the influence of the parabolic structure potential. We analyse the interplay of different scattering mechanisms on subband mobility mediated by intersubband interactions which leads to interesting results.

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium arsenide; impurity scattering; semiconductor quantum wells; wave functions; Al_xGa_1-xAs; delta-doped parabolic quantum well structures; intersubband interactions; mobility; multisubband electron mobility; parabolic structure potential; scattering mechanisms; square quantum well; subband electron wave function shifting; subband mobility; Electric potential; Electron mobility; Gallium arsenide; Impurities; Metals; Scattering; Wave functions; Multisubband electron mobility; Parabolic double quantum well;

fLanguage

English

Publisher

ieee

Conference_Titel

Advances in Electrical Engineering (ICAEE), 2014 International Conference on

Conference_Location

Vellore

Type

conf

DOI

10.1109/ICAEE.2014.6838459

Filename

6838459