Title :
Modeling of the post-breakdown IG-VG-VD characteristics of La2O3-based MOS transistors
Author :
Miranda, E. ; Sune, Jordi ; Kawanago, T. ; Kakushima, K. ; Iwai, Hisato
Author_Institution :
Dept. d´Eng. Electron., Univ. Autonoma de Barcelona, Barcelona, Spain
Abstract :
A simple analytic model for the post-breakdown conduction characteristics in W/La2O3/p-type Si MOSFETs is reported. The model is based on the solution of the generalized diode equation and captures the behavior of the gate current (IG) as a function of the gate (VG) and drain (VD) voltages including both positive and negative biases. The devices were subjected to ramped voltage stress so as to induce the dielectric breakdown close to or at the transistor drain region.
Keywords :
MOSFET; electric breakdown; lanthanum compounds; semiconductor device models; silicon; La2O3; MOS transistor; Si; Si MOSFET; dielectric breakdown; drain voltage; gate current; generalized diode equation; post-breakdown IG-VG-VD characteristic; post-breakdown conduction characteristic; ramped voltage stress; transistor drain region; Equations; Logic gates; MOSFETs; Mathematical model; Resistance; Silicon; MOS; breakdown; reliability;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481391
