DocumentCode
1602008
Title
Accurate mixed electrical and electromagnetic model of a 6,5kV IGBT module
Author
Batista, E. ; Dienot, J.M. ; Mermet-Guyennet, M. ; Castellazzi, A. ; Ciappa, M. ; Fichtner, W.
Author_Institution
Power Electron. Assoc. Res. Lab., ALSTOM Transp., Semeac
fYear
2007
Firstpage
1151
Lastpage
1155
Abstract
The compact model development of a 6,5 kV field-stop IGBT module is presented. In particular, the model considers the realistic interconnection of IGBTs and anti-parallel diodes found in commercial modules, providing, next to semiconductor physics, an accurate description of electro-magnetic (EM) phenomena associated with the package and layout. A selection of simulation examples demonstrates the usefulness of the proposed solution.
Keywords
insulated gate bipolar transistors; IGBT module; anti-parallel diodes; electro-magnetic phenomena; electromagnetic model; mixed electrical model; semiconductor physics; voltage 5 kV; voltage 6 kV; Bonding; Electromagnetic modeling; Insulated gate bipolar transistors; Laboratories; Packaging; Power electronics; Power system interconnection; Power system modeling; Semiconductor diodes; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics, 2007. ICPE '07. 7th Internatonal Conference on
Conference_Location
Daegu
Print_ISBN
978-1-4244-1871-8
Electronic_ISBN
978-1-4244-1872-5
Type
conf
DOI
10.1109/ICPE.2007.4692559
Filename
4692559
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