Title :
Intermixing in InAsP/InP quantum wells induced by dry etching processes
Author :
Hortelano, Vanesa ; TORRES, ABEL ; Sanz, M. ; Jimenez, Joaquin ; Martinez, Oscar ; Landesman, J.P.
Author_Institution :
Dept. de Fis. de la Materia, Condensada Univ. de Valladolid, Valladolid, Spain
Abstract :
InP ridge waveguides with different dimensions, height and width, were fabricated by inductively coupled plasma etching. The InP raw material was provided of nine buried InAsP quantum wells with variable composition and at different depths, in order to study the damage produced in the structure by the dry etching process. The etched guides were studied by spectrally resolved cathodoluminescence. The changes induced in the quantum wells by different etching chemistries were analyzed. Other parameters as the etching time, and guide dimensions were considered.
Keywords :
III-V semiconductors; arsenic compounds; cathodoluminescence; etching; indium compounds; ridge waveguides; semiconductor quantum wells; InAsP-InP; dry etching process; etching chemistries; etching guide dimension; etching time; inductively coupled plasma etching; intermixing; quantum wells; raw material; ridge waveguide; spectrally resolved cathodoluminescence; structure damage; Chemistry; Dry etching; Indium phosphide; Iterative closest point algorithm; Optical waveguides; Plasmas; Cathodoluminescence quantum well intermixing; etching; inductive coupled plasma;
Conference_Titel :
Electron Devices (CDE), 2013 Spanish Conference on
Conference_Location :
Valladolid
Print_ISBN :
978-1-4673-4666-5
Electronic_ISBN :
978-1-4673-4667-2
DOI :
10.1109/CDE.2013.6481395
