• DocumentCode
    1602151
  • Title

    Defect assessment and leakage control in atomic layer deposited Al2O3 and HfO2 dielectrics

  • Author

    Gonzalez, M.B. ; Rafi, J.M. ; Beldarrain, O. ; Zabala, M. ; Campabadal, F.

  • Author_Institution
    Inst. de Microelectron. de Barcelona, CNM, Barcelona, Spain
  • fYear
    2013
  • Firstpage
    277
  • Lastpage
    280
  • Abstract
    In this work, a systematic study of the electrical characteristics of Al2O3 and HfO2 dielectrics based MOS capacitors is presented enabling the analysis of the impact of pre-existing electrically active defects, stress induced degradation and the dielectric breakdown phenomena on the leakage current behavior.
  • Keywords
    MOS capacitors; alumina; atomic layer deposition; electric breakdown; hafnium compounds; leakage currents; Al2O3; HfO2; MOS capacitors; atomic layer deposited dielectrics; defect assessment; dielectric breakdown phenomena; leakage control; leakage current behavior; stress induced degradation; Aluminum oxide; Atomic layer deposition; Capacitors; Films; Hafnium compounds; Logic gates; A12O3; ALD; Charge trapping; Defect generation; Hf02;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2013 Spanish Conference on
  • Conference_Location
    Valladolid
  • Print_ISBN
    978-1-4673-4666-5
  • Electronic_ISBN
    978-1-4673-4667-2
  • Type

    conf

  • DOI
    10.1109/CDE.2013.6481396
  • Filename
    6481396
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1602151