Title :
Piezoelectric resonators from La3Ga5SiO14 (langasite)-single crystals
Author :
Grouzinenko, V.B. ; Bezdelkin, V.V.
Author_Institution :
Sci. Res. Inst. ´´Fonon´´, Moscow, Russia
Abstract :
The possibility of using langasite (LGS) single crystals in bulk acoustic wave (BAW) resonators for time-compensated crystal oscillators (TCXOs) and voltage-compensated crystal oscillators (VCXOs) is explored. Tables presenting a number of fundamental physical properties of LGS crystals and resonators manufactured is given. The dependencies of frequency-temperature characteristics, frequency coefficients, motional parameters, and resonance spacing vs. piezoelectric element orientation and size for different modes of vibration are analyzed. It is shown that LGS resonators have considerably smaller motional inductance and capacitance ratio values and size compared to quartz crystal units. Possible parameter values of LGS resonators operating in flexure, longitudinal, face-shear, and thickness-shear modes are discussed
Keywords :
compensation; crystal resonators; gallium compounds; lanthanum compounds; BAW resonators; La3Ga5SiO14; capacitance ratio; flexure modes; frequency coefficients; frequency-temperature characteristics; langasite; longitudinal modes; motional inductance ratio; motional parameters; physical properties; piezoelectric element orientation; resonance spacing; thickness-shear modes; time-compensated crystal oscillators; voltage-compensated crystal oscillators; Attenuation; Crystals; Frequency; IEC standards; Inductance; Manufacturing; Temperature; Thermal expansion;
Conference_Titel :
Frequency Control Symposium, 1992. 46th., Proceedings of the 1992 IEEE
Conference_Location :
Hershey, PA
Print_ISBN :
0-7803-0476-4
DOI :
10.1109/FREQ.1992.269966
